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10-FZ06NBA075SA-P916L33 preliminary datasheet flowboost0 600v/75a symmetric boost clip-in pcb mounting low inductance layout ups 10-FZ06NBA075SA-P916L33 tj=25c, unless otherwise specified parameter symbol value unit input boost igbt collector-emitter break down voltage v ce 600 v t h =80c 56 t c =80c 74 t h =80c 93 t c =80c 141 gate-emitter peak voltage v ge 20 v t sc t j 150c 6 s v cc v ge =15v 360 v maximum junction temperature t j max 175 c input boost inverse diode t h =80c 33 t c =80c 44 t h =80c 53 t c =80c 80 v rrm peak repetitive reverse voltage short circuit ratings dc collector current w a w t p limited by t j max repetitive peak collector current i c p tot c 175 a a v a 600 225 90 t j =25c power dissipation per igbt maximum junction temperature t j max i frm repetitive peak forward current dc forward current i f power dissipation per diode types maximum ratings condition flow0 housing target applications schematic features t j =t j max i cpulse p tot t j =t j max t j =t j max t j =t j max t p limited by t j max 1 revisi on: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition input boost fwd t h =80c 63 t c =80c 83 t h =80c 86 t c =80c 130 thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm 600 120 175 clearance insulation voltage creepage distance t op operation temperature under switching condition c storage temperature t stg -40?+125 c -40?+(tjmax - 25) v a c a t j =t j max w t j max p tot power dissipation maximum junction temperature i f repetitive peak forward current v rrm peak repetitive reverse voltage dc forward current i frm t j =t j max t j =25c t p limited by t j max 2 revi sion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 5 5,8 6,5 t j =150c t j =25c 1 1,63 2,1 t j =150c 1,86 t j =25c 0,2 t j =150c t j =25c 650 t j =150c t j =25c 151 t j =150c 154 t j =25c 20 t j =150c 24 t j =25c 209 t j =150c 233 t j =25c 93 t j =150c 111 t j =25c 1,09 t j =150c 1,50 t j =25c 1,78 t j =150c 2,41 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,02 k/w t j =25c 1 1,63 2,05 tj=125c 1,56 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,8 k/w tj=25c 1 1,49 2 t j =125c 1,46 t j =25c 30 t j =125c t j =25c 70 t j =125c 86 t j =25c 117 t j =125c 152 t j =25c 3,07 t j =125c 6,19 t j =25c 0,61 t j =125c 1,33 di ( rec ) max t j =25c 5142 /d t t j =125c 2414 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,11 k/w * see details on thermistor charts on figure 2. na ? ns ma a/ s mws c a tj=25c tj=25c tj=100c ns v v nc v a 4620 137 470 288 none thermistor 15 r/r r100=1486 ? rated resistance power dissipation constant deviation of r100 power dissipation p mw 200 mw/k reverse recovered energy reverse leakage current peak recovery current peak rate of fall of recovery current reverse recovery charge reverse recovery time 0 0 600 15 mws pf v tj=25c 0 characteristic values i ges gate emitter threshold voltage t r collector-emitter saturation voltage input boost igbt gate-emitter leakage current collector-emitter cut-off v ge(th) value conditions t rr input boost fwd forward voltage diode forward voltage input capacitance output capacitance reverse transfer capacitance input boost inverse diode gate charge e rec q rr i ces c oss i rrm i rm c ies t d(on) e off t f c rss v f q gate v f f=1mhz turn-off energy loss per pulse r gint turn-off delay time e on t d(off) turn-on energy loss per pulse fall time turn-on delay time rise time integrated gate resistor 15 rgoff=8 ? rgon=8 ? v ce(sat) v ce =v ge f=1mhz 0 20 rgoff=8 ? 600 75 75 tj=25c 0,0012 75 75 2 +5 -5 tj=25c % 22000 ? 300 25 300 25 10 r b-value b (25/50) tol. 3% tj=25c 3950 k b-value b (25/100) tol. 3% tj=25c 3996 k vincotech ntc reference b 3 revisio n: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 1 boost igbt figure 2 boost igbt typical output characteristics typical output characteristics i d = f(v ds ) i d = f(v ds ) at at t p = 250 s t p = 250 s t j = 25 c t j = 150 c v ge from 7 v to 17 v in steps of 1 v v ge from 7 v to 17 v in steps of 1 v figure 3 boost igbt figure 4 boost fwd typical transfer characteristics typical diode forward current as i d = f(v ds ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v input boost 0 50 100 150 200 250 00 , 511 , 522 , 53 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 50 100 150 200 250 012345 v ce (v) i c (a) 0 50 100 150 200 250 012345 v ce (v) i c (a) 0 15 30 45 60 75 024681 01 2 v gs (v) i d (a) t j = 25c t j = t jmax -25c 4 revis ion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 5 boost igbt figure 6 boost igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i d ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 300 v v ce = 300 v v gs = 15 v v gs = 15 v r gon = 8 ? i c = 75 a r goff = 8 ? figure 7 boost igbt figure 8 boost igbt typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector (drain) current as a function of gate resistor e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ds = 300 v v ds = 300 v v gs = 15 v v gs = 15 v r gon = 8 ? i d = 75 a r goff = 8 ? input boost e rec high t e rec low t 0,0 0,4 0,8 1,2 1,6 2,0 0 25 50 75 100 125 150 i c (a) e (mws) e rec high t e rec low t 0,0 0,4 0,8 1,2 1,6 2,0 0 8 16 24 32 40 r g ( ) e (mws) e off high t e on high t e on low t e off low t 0 1 2 3 4 5 0 25 50 75 100 125 150 i c (a) e (mws) e off high t e on high t e on low t e off low t 0 1 2 3 4 5 0 8 16 24 32 40 r g ( ) e (mws) 5 revis ion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 9 boost igbt figure 10 boost igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i d ) t = f(r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ds = 300 v v ds = 300 v v gs = 15 v v gs = 15 v r gon = 8 ? i c = 75 a r goff = 8,015 ? figure 11 boost fwd figure 12 boost fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of mosfet turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ds = 300 v v r = 300 v v gs = 15 v i f = 75 a r gon = 8 ? v gs = 15 v input boost t doff t f t don t r 0,001 0,01 0,1 1 0 25 50 75 100 125 150 i d (a) t ( s) t doff t f t don t r 0,001 0,01 0,1 1 0 8 16 24 32 40 r g ( ) t ( s) t rr high t t rr low t 0 0,1 0,2 0,3 0,4 0,5 0,6 0 8 16 24 32 40 r gon ( ) t rr ( s) t rr high t t rr low t 0,00 0,04 0,08 0,12 0,16 0,20 0 25 50 75 100 125 150 i c (a) t rr ( s) 6 revis ion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 13 boost fwd figure 14 boost fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of mosfet turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/150 c tj = 25/150 c v ds = 300 v v r =300 v v gs = 15 v i f =75 a r gon = 8 ? v gs =15 v figure 15 boost fwd figure 16 boost fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ds = 300 v v r = 300 v v gs = 15 v i f = 75 a r gon = 8 ? v gs = 15 v input boost i rrm high t i rrm low t 0 30 60 90 120 150 0 8 16 24 32 40 r gon ( ) i rr m (a) q rr high t q rr low t 0 2 4 6 8 10 0 8 16 24 32 40 r gon ( ) q rr ( c) i rrm high t i rrm low t 0 20 40 60 80 100 120 0 25 50 75 100 125 150 i c (a) i rrm (a) q rr high t q rr low t 0,0 1,5 3,0 4,5 6,0 7,5 9,0 0 25 50 75 100 125 150 i c (a) q rr ( c) 7 revis ion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 17 boost fwd figure 18 boost fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 300 v v r =300 v v ge = 15 v i f =75 a r gon = 8 ? v gs =15 v figure 19 boost igbt figure 20 boost fwd mosfet transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 1,02 k/w igbt thermal model values r thjh = 1,11 k/w fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,037 6,37e+00 0,03 9,19e+00 0,176 8,57e-01 0,13 9,97e-01 0,550 1,57e-01 0,43 1,49e-01 0,179 2,60e-02 0,33 3,47e-02 0,042 3,81e-03 0,12 5,94e-03 0,037 3,09e-04 0,07 3,69e-04 input boost 0 3000 6000 9000 12000 15000 0 8 16 24 32 40 r gon ( ) di rec / dt (a/ s) t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 1500 3000 4500 6000 7500 0 25 50 75 100 125 150 i c (a) di rec / dt (a/ s) di 0 /dt di rec /dt di 0 /dt di rec /dt t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 8 revis ion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 21 boost igbt figure 22 boost igbt power dissipation as a collector/drain current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 oc t j = 175 oc v gs = 15 v figure 23 boost fwd figure 24 boost fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 oc t j = 175 oc input boost 0 40 80 120 160 200 0 50 100 150 200 th ( o c) p tot (w) 0 15 30 45 60 75 90 0 50 100 150 200 th ( o c) i c (a) 0 30 60 90 120 150 180 0 50 100 150 200 t h ( o c) p tot (w) 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) i f (a) 9 revis ion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 25 boos t igbt figure 26 boost igbt safe operating area as a function gate voltage vs gate charge of drain-source voltage i d = f(v ds )v gs = f(qg) at at d = single pulse i d = 75 a t h = 80 oc v gs = 15 v t j =t jmax oc input boost v ds (v) i d (a) 10 3 10 0 10 0 10 1 10 2 10 3 100us 1ms 10ms 100ms dc 10 2 10 1 10us 0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 qg (nc) u gs (v) 120v 400v 10 revision: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 1 boost inv. diode figure 2 boost inv. diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f )z thjh = f(t p ) at at t p = 250 sd = t p / t r thjh = 1,800 k/w figure 3 boost inv. diode figure 4 boost inv. diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 oc t j = 175 oc boost inv. diode 0 20 40 60 80 100 00 , 511 , 522 , 53 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 t h ( o c) i f (a) 11 revis ion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 1 thermistor figure 2 thermistor typical ntc characteristic typical ntc resistance values as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 4000 8000 12000 16000 20000 24000 25 50 75 100 125 t (c) r/ ? [] ?= ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? 25 100 / 25 11 25 )( tt b ertr 12 revis ion: copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet t j 150 c r g on 8 ? r goff 8 ? figure 1 boost igbt figure 2 boost igbt turn-off switching waveforms & definition of t dof f , t eof f turn-on switching waveforms & definition of t don , t eon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 74 a i c (100%) = 74 a t doff = 0,23 s t don = 0,15 s t eoff = 0,61 s t eon = 0,30 s figure 3 boost igbt figure 4 boost igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 74 a i c (100%) = 74 a t f = 0,11 s t r = 0,02 s switching definitions boost igbt general conditions = = = i c 1% v ce 90% v ge 90% -30 0 30 60 90 120 150 -0,3 -0,15 0 0,15 0,3 0,45 0,6 0,75 time (us) % t doff t eoff v ce i c v ge i c 10% v ge 10% t don v ce 3% -50 0 50 100 150 200 250 2,8 2,9 3 3,1 3,2 3,3 3,4 time(us) % i c v ce t eon v ge fitted i c 10% i c 90% i c 60% i c 40% -25 0 25 50 75 100 125 0,05 0,1 0,15 0,2 0,25 0,3 0,35 0,4 time (us) % v ce i c t f i c 10% i c 90% -50 0 50 100 150 200 250 3,05 3,1 3,15 3,2 3,25 3,3 time(us) % t r v ce i c 13 revis ion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 5 boost igbt figure 6 boost igbt turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 22,30 kw p on (100%) = 22,30 kw e off (100%) = 2,41 mj e on (100%) = 1,50 mj t eoff = 0,61 s t eon = 0,30 s figure 7 boost igbt figure 8 boost fwd gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t rr v geoff = -15 v v d (100%) = 300 v v geon = 15 v i d (100%) = 74 a v c (100%) = 300 v i rrm (100%) = -86 a i c (100%) = 74 a t rr = 0,15 s q g = 794,04 nc switching definitions boost igbt i c 1% v ge90% -20 0 20 40 60 80 100 120 -0,15 0 0,15 0,3 0,45 0,6 0,75 time (us) % p of f e off t eoff v ce3% v ge10% -25 0 25 50 75 100 125 150 2,9 3 3,1 3,2 3,3 3,4 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -200 0 200 400 600 800 qg (nc) v ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -150 -100 -50 0 50 100 150 3 3,1 3,2 3,3 3,4 3,5 3,6 time(us) % i d v d fitted 14 revis ion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet figure 9 boost fwd figure 10 boost fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr )( t erec = integrating time for e rec ) i d (100%) = 74 a p rec (100%) = 22,30 kw q rr (100%) = 6,19 c e rec (100%) = 1,33 mj t qrr = 0,55 s t erec = 0,55 s figure 11 figure 12 buck stage switching measurement circuit boost stage switching measurement circuit measurement circuits switching definitions boost igbt t qrr -150 -100 -50 0 50 100 150 3 3,15 3,3 3,45 3,6 3,75 3,9 time(us) % i d q r r -25 0 25 50 75 100 125 3 3,15 3,3 3,45 3,6 3,75 3,9 time(us) % p rec e rec t erec 15 revis ion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet version ordering code in datamatrix as in packaging barcode as standard in flow0 12mm housing 10-FZ06NBA075SA-P916L33 p916l33 p916l33 outline pinout ordering code & marking ordering code and marking - outline - pinout 16 revi sion: 6 copyright by vincotech
10-FZ06NBA075SA-P916L33 preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. target product status datasheet status definition this datasheet contains the design specifications for product development. specificat ions may change in any manner without notice. the data contained is exclusively intended for technically trained staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the applic ation or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) su pport or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 17 revisi on: 6 copyright by vincotech

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